Quantum Spin Hall Effect in Graphene

C. L. Kane and E. J. Mele
Phys. Rev. Lett. 95, 226801 – Published 23 November 2005

Abstract

We study the effects of spin orbit interactions on the low energy electronic structure of a single plane of graphene. We find that in an experimentally accessible low temperature regime the symmetry allowed spin orbit potential converts graphene from an ideal two-dimensional semimetallic state to a quantum spin Hall insulator. This novel electronic state of matter is gapped in the bulk and supports the transport of spin and charge in gapless edge states that propagate at the sample boundaries. The edge states are nonchiral, but they are insensitive to disorder because their directionality is correlated with spin. The spin and charge conductances in these edge states are calculated and the effects of temperature, chemical potential, Rashba coupling, disorder, and symmetry breaking fields are discussed.

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  • Received 29 November 2004

DOI:https://doi.org/10.1103/PhysRevLett.95.226801

©2005 American Physical Society

Authors & Affiliations

C. L. Kane and E. J. Mele

  • Dept. of Physics and Astronomy, University of Pennsylvania, Philadelphia, Pennsylvania 19104, USA

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Issue

Vol. 95, Iss. 22 — 25 November 2005

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