Resonant intervalley scattering in GaAs

J.-Y. Bigot, M. T. Portella, R. W. Schoenlein, J. E. Cunningham, and C. V. Shank
Phys. Rev. Lett. 65, 3429 – Published 31 December 1990
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Abstract

The dynamics of intervalley scattering of electrons is investigated in GaAs with 6 fs optical pulses at room temperature. We report the observation of a ‘‘resonant coupling’’ between the Γ and X conduction bands. This effect slows the apparent rate of scattering of carriers in the Γ valley at energies near the minimum of the X valley.

  • Received 25 June 1990

DOI:https://doi.org/10.1103/PhysRevLett.65.3429

©1990 American Physical Society

Authors & Affiliations

J.-Y. Bigot, M. T. Portella, R. W. Schoenlein, J. E. Cunningham, and C. V. Shank

  • Lawrence Berkeley Laboratory, University of California, One Cyclotron Road, MS:70-110A, Berkeley, California 94720

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Issue

Vol. 65, Iss. 27 — 31 December 1990

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