Abstract
Ge-Si strained-layer superlattices have been synthesized on (001) Ge with unit-cell periodicity of ten atomic monolayers along the growth direction. Microstructural characterization establishes extended planar superlattice layering. X-ray diffraction is used to measure the superlattice composition. Optical reflectance spectra show new optical transitions at energies theoretically predicted for superlattice-induced direct optical transitions at the center of the Brillouin zone.
- Received 5 May 1989
DOI:https://doi.org/10.1103/PhysRevLett.63.2104
©1989 American Physical Society