Abstract
We present a purely optical method to determine the effective electron-hole mobility ratio in electro-optic, photoconductive materials. Our technique combines observations of the dynamics of the interband photoconductivity with the determination of the anisotropy of the response time of a light induced space-charge electric field. In KNbO single crystals we measured a trap-limited mobility ratio along the crystallographic axis and along the axis.
- Received 29 April 1997
DOI:https://doi.org/10.1103/PhysRevB.56.12196
©1997 American Physical Society