Characterization of the bipolar mobility in polar materials by interband photoexcitation

Pietro Bernasconi, Germano Montemezzani, Ivan Biaggio, and Peter Günter
Phys. Rev. B 56, 12196 – Published 15 November 1997
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Abstract

We present a purely optical method to determine the effective electron-hole mobility ratio in electro-optic, photoconductive materials. Our technique combines observations of the dynamics of the interband photoconductivity with the determination of the anisotropy of the response time of a light induced space-charge electric field. In KNbO3 single crystals we measured a trap-limited mobility ratio μhc/μec=1.25±0.15 along the crystallographic c axis and μhb/μeb=2.0±0.4 along the b axis.

  • Received 29 April 1997

DOI:https://doi.org/10.1103/PhysRevB.56.12196

©1997 American Physical Society

Authors & Affiliations

Pietro Bernasconi, Germano Montemezzani, Ivan Biaggio, and Peter Günter

  • Nonlinear Optics Laboratory, Institute of Quantum Electronics, Swiss Federal Institute of Technology, ETH Hönggerberg, CH-8093 Zürich, Switzerland

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Vol. 56, Iss. 19 — 15 November 1997

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