Abstract
We examine the electronic transport properties of the interfacial charge layer in a metal-oxide–semiconductor structure on Te. We focus, in particular, on the conductivity discontinuities incurred when different quantized levels of the surface layer are successively filled with rising carrier density . Three types of levels are considered: the electric subbands, Landau levels in a perpendicular magnetic field (), and the magnetoelectric (hybrid) levels for a magnetic field parallel to surface ().
- Received 30 July 1984
DOI:https://doi.org/10.1103/PhysRevB.31.2416
©1985 American Physical Society