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Structural imaging of nanoscale phonon transport in ferroelectrics excited by metamaterial-enhanced terahertz fields

Yi Zhu, Frank Chen, Joonkyu Park, Kiran Sasikumar, Bin Hu, Anoop R. Damodaran, Il Woong Jung, Matthew J. Highland, Zhonghou Cai, I-Cheng Tung, Donald A. Walko, John W. Freeland, Lane W. Martin, Subramanian K. R. S. Sankaranarayanan, Paul G. Evans, Aaron M. Lindenberg, and Haidan Wen
Phys. Rev. Materials 1, 060601(R) – Published 16 November 2017
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Abstract

Nanoscale phonon transport is a key process that governs thermal conduction in a wide range of materials and devices. Creating controlled phonon populations by resonant excitation at terahertz (THz) frequencies can drastically change the characteristics of nanoscale thermal transport and allow a direct real-space characterization of phonon mean-free paths. Using metamaterial-enhanced terahertz excitation, we tailored a phononic excitation by selectively populating low-frequency phonons within a nanoscale volume in a ferroelectric BaTiO3 thin film. Real-space time-resolved x-ray diffraction microscopy following THz excitation reveals ballistic phonon transport over a distance of hundreds of nm, two orders of magnitude longer than the averaged phonon mean-free path in BaTiO3. On longer length scales, diffusive phonon transport dominates the recovery of the transient strain response, largely due to heat conduction into the substrate. The measured real-space phonon transport can be directly compared with the phonon mean-free path as predicted by molecular dynamics modeling. This time-resolved real-space visualization of THz-matter interactions opens up opportunities to engineer and image nanoscale transient structural states with new functionalities.

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  • Received 13 September 2017

DOI:https://doi.org/10.1103/PhysRevMaterials.1.060601

©2017 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

Yi Zhu1, Frank Chen2,3, Joonkyu Park4, Kiran Sasikumar5, Bin Hu1, Anoop R. Damodaran6,7, Il Woong Jung5, Matthew J. Highland8, Zhonghou Cai1, I-Cheng Tung1, Donald A. Walko1, John W. Freeland1, Lane W. Martin6,7, Subramanian K. R. S. Sankaranarayanan5, Paul G. Evans4, Aaron M. Lindenberg3,9,10, and Haidan Wen1,*

  • 1Advanced Photon Source, Argonne National Laboratory, Argonne, Illinois 60439, USA
  • 2Department of Electrical Engineering, Stanford University, Stanford, California 94305, USA
  • 3SIMES Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, California 94025, USA
  • 4Department of Materials Science and Engineering, University of Wisconsin, Madison, Madison, Wisconsin 53706, USA
  • 5Center for Nanoscale Materials, Argonne National Laboratory, Argonne, Illinois 60439, USA
  • 6Department of Materials Science and Engineering, University of California, Berkeley, Berkeley, California 94720, USA
  • 7Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA
  • 8Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439, USA
  • 9Department of Materials Science and Engineering, Stanford University, Stanford, California 94305, USA
  • 10PULSE Institute, SLAC National Accelerator Laboratory, Menlo Park, California 94025, USA

  • *wen@aps.anl.gov

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Issue

Vol. 1, Iss. 6 — November 2017

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