Novel Pd2Se3 Two-Dimensional Phase Driven by Interlayer Fusion in Layered PdSe2

Junhao Lin, Sebastian Zuluaga, Peng Yu, Zheng Liu, Sokrates T. Pantelides, and Kazu Suenaga
Phys. Rev. Lett. 119, 016101 – Published 6 July 2017
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Abstract

Two-dimensional (2D) materials are easily fabricated when their bulk form has a layered structure. The monolayer form in layered transition-metal dichalcogenides is typically the same as a single layer of the bulk material. However, PdSe2 presents a puzzle. Its monolayer form has been theoretically shown to be stable, but there have been no reports that monolayer PdSe2 has been fabricated. Here, combining atomic-scale imaging in a scanning transmission electron microscope and density functional theory, we demonstrate that the preferred monolayer form of this material amounts to a melding of two bulk monolayers accompanied by the emission of Se atoms so that the resulting stoichiometry is Pd2Se3. We further verify the interlayer melding mechanism by creating Se vacancies in situ in the layered PdSe2 matrix using electron irradiation. The discovery that strong interlayer interactions can be induced by defects and lead to the formation of new 2D materials opens a new venue for the exploration of defect engineering and novel 2D structures.

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  • Received 10 February 2017

DOI:https://doi.org/10.1103/PhysRevLett.119.016101

© 2017 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

Junhao Lin1,*, Sebastian Zuluaga2, Peng Yu3, Zheng Liu3,4, Sokrates T. Pantelides2,5, and Kazu Suenaga1,6,†

  • 1National Institute of Advanced Industrial Science and Technology (AIST), AIST Central 5, Tsukuba 305-8565, Japan
  • 2Department of Physics and Astronomy, Vanderbilt University, Nashville, Tennessee 37235, USA
  • 3Centre for Programmed Materials, School of Materials Science and Engineering, Nanyang Technological University, Singapore 639798, Singapore
  • 4NOVITAS, Nanoelectronics Centre of Excellence, School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798, Singapore
  • 5Department of Electrical Engineering and Computer Science, Vanderbilt University, Nashville, Tennessee 37235, USA
  • 6Department of Mechanical Engineering, The University of Tokyo, Tokyo 113-8656, Japan

  • *To whom all correspondence should be addressed. lin.junhao@aist.go.jp
  • suenaga-kazu@aist.go.jp

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Issue

Vol. 119, Iss. 1 — 7 July 2017

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