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Electronic band gaps and exciton binding energies in monolayer MoxW1xS2 transition metal dichalcogenide alloys probed by scanning tunneling and optical spectroscopy

Albert F. Rigosi, Heather M. Hill, Kwang Taeg Rim, George W. Flynn, and Tony F. Heinz
Phys. Rev. B 94, 075440 – Published 29 August 2016
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Abstract

Using scanning tunneling spectroscopy (STS) and optical reflectance contrast measurements, we examine band-gap properties of single layers of transition metal dichalcogenide (TMDC) alloys: MoS2, Mo0.5W0.5S2, Mo0.25W0.75S2, Mo0.1W0.9S2, and WS2. The quasiparticle band gap, spin-orbit separation of the excitonic transitions at the K/K point in the Brillouin zone, and binding energies of the A exciton are extracted from STS and optical data. The exciton binding energies change roughly linearly with tungsten concentration. For our samples on an insulating substrate, we report quasiparticle band gaps from 2.17±0.04eV(MoS2) to 2.38±0.06eV(WS2), with A exciton binding energies ranging from 310 to 420 meV.

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  • Received 15 April 2016

DOI:https://doi.org/10.1103/PhysRevB.94.075440

©2016 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

Albert F. Rigosi1,2, Heather M. Hill1,2, Kwang Taeg Rim3, George W. Flynn3, and Tony F. Heinz1,2

  • 1Departments of Physics and Electrical Engineering, Columbia University, 538 West 120th St., New York, New York 10027, USA
  • 2Department of Applied Physics, Stanford University, 348 Via Pueblo Mall, Stanford, California 94305, USA and SLAC National Accelerator Laboratory, 2575 Sand Hill Road, Menlo Park, California 94025, USA
  • 3Department of Chemistry, Columbia University, 500 West 120th St., New York, New York 10027, USA

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Issue

Vol. 94, Iss. 7 — 15 August 2016

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