High-frequency polarization switching of a thin ferroelectric film

J.-G. Caputo, A. I. Maimistov, E. D. Mishina, E. V. Kazantseva, and V. M. Mukhortov
Phys. Rev. B 82, 094113 – Published 21 September 2010

Abstract

We consider both experimentally and analytically the transient oscillatory process that arises when a rapid change in voltage is applied to a BaxSr1xTiO3 ferroelectric thin film deposited on an Mg0 substrate. High frequency (108rad/s) polarization oscillations are observed in the ferroelectric sample. These can be understood using a simple field-polarization model. In particular, we obtain analytic expressions for the oscillation frequency and the decay time of the polarization fluctuation in terms of the material parameters. These estimations agree well with the experimental results.

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  • Received 17 June 2010

DOI:https://doi.org/10.1103/PhysRevB.82.094113

©2010 American Physical Society

Authors & Affiliations

J.-G. Caputo1,*, A. I. Maimistov2,3,†, E. D. Mishina4,‡, E. V. Kazantseva2,4,§, and V. M. Mukhortov5

  • 1Laboratoire de Mathématiques, INSA de Rouen, BP 8, Avenue de l’Universite, Saint-Etienne du Rouvray 76801, France
  • 2Department of Solid State Physics and Nanostructures, Moscow Engineering Physics Institute, Kashirskoe sh. 31, Moscow 115409, Russia
  • 3Department of Physics and Technology of Nanostructures/REC Bionanophysics, Moscow Institute for Physics and Technology, Institutskii lane 9, Dolgoprudny, Moscow region 141700, Russia
  • 4Department of Condensed Matter Physics, Moscow Institute of Radiotechnics, Electronics and Automation, Vernadskogo pr. 78, Moscow 119454, Russia
  • 5Southern Scientific Center, Russian Academy of Sciences, Rostov-on-Don 344006, Russia

  • *caputo@insa-rouen.fr
  • aimaimistov@gmail.com
  • mishina57@mail.ru
  • §elena.kazantseva@gmail.com

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Issue

Vol. 82, Iss. 9 — 1 September 2010

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