Variational calculations for the binding energies of additionally charged, multiple acceptors in semiconductors, with configurations ${\mathrm{}\left(1s\right)\mathrm{}}^3$ and ${\mathrm{}\left(1s\right)\mathrm{}}^4$, are presented.

• Received 21 October 1983

DOI:https://doi.org/10.1103/PhysRevB.29.3671