Theory of excitons bound to neutral impurities in polar semiconductors

H. Atzmüller, F. Fröschl, and U. Schröder
Phys. Rev. B 19, 3118 – Published 15 March 1979
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Abstract

The ground-state energy and the configuration of a complex consisting of an exciton bound to a neutral impurity are investigated. Starting from a Hamiltonian which includes the electron-phonon coupling as described by Fröhlich, we derive a mass renormalization and an effective electron-hole potential, both depending on the interparticle distances. The corresponding Schrödinger equation is solved by an ansatz which describes an exciton bound to a donor as well as to an acceptor. In addition, central-cell effects are taken into account. Numerical results for several III-V and II-VI compounds are in good agreement with experimental data.

  • Received 21 June 1978

DOI:https://doi.org/10.1103/PhysRevB.19.3118

©1979 American Physical Society

Authors & Affiliations

H. Atzmüller, F. Fröschl, and U. Schröder

  • Institut für Theoretische Physik, Universität Regensburg, D 8400 Regensburg, Federal Republic of Germany

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Vol. 19, Iss. 6 — 15 March 1979

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