Dilute ferromagnetic semiconductors: Physics and spintronic structures

Tomasz Dietl and Hideo Ohno
Rev. Mod. Phys. 86, 187 – Published 24 March 2014

Abstract

This review compiles results of experimental and theoretical studies on thin films and quantum structures of semiconductors with randomly distributed Mn ions, which exhibit spintronic functionalities associated with collective ferromagnetic spin ordering. Properties of p-type Mn-containing III-V as well as II-VI, IV-VI, V2VI3, I-II-V, and elemental group IV semiconductors are described, paying particular attention to the most thoroughly investigated system (Ga,Mn)As that supports the hole-mediated ferromagnetic order up to 190 K for the net concentration of Mn spins below 10%. Multilayer structures showing efficient spin injection and spin-related magnetotransport properties as well as enabling magnetization manipulation by strain, light, electric fields, and spin currents are presented together with their impact on metal spintronics. The challenging interplay between magnetic and electronic properties in topologically trivial and nontrivial systems is described, emphasizing the entangled roles of disorder and correlation at the carrier localization boundary. Finally, the case of dilute magnetic insulators is considered, such as (Ga,Mn)N, where low-temperature spin ordering is driven by short-ranged superexchange that is ferromagnetic for certain charge states of magnetic impurities.

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  • Received 30 June 2013

DOI:https://doi.org/10.1103/RevModPhys.86.187

© 2014 American Physical Society

Authors & Affiliations

Tomasz Dietl*

  • Institute of Physics, Polish Academy of Sciences, aleja Lotników 32/46, PL-02 668 Warszawa, Poland
  • Institute of Theoretical Physics, Faculty of Physics, University of Warsaw, ulica Hoża 69, PL-00 681 Warszawa, Poland
  • WPI-Advanced Institute for Materials Research (WPI-AIMR), Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan

Hideo Ohno

  • Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University, Katahira 2-1-1, Aoba-ku, Sendai, Miyagi 980-8577, Japan
  • WPI-Advanced Institute for Materials Research (WPI-AIMR), Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan
  • Center for Spintronics Integrated System, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan

  • *dietl@ifpan.edu.pl
  • ohno@riec.tohoku.ac.jp

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Issue

Vol. 86, Iss. 1 — January - March 2014

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