Physics of thin-film ferroelectric oxides

M. Dawber, K. M. Rabe, and J. F. Scott
Rev. Mod. Phys. 77, 1083 – Published 17 October 2005

Abstract

This review covers important advances in recent years in the physics of thin-film ferroelectric oxides, the strongest emphasis being on those aspects particular to ferroelectrics in thin-film form. The authors introduce the current state of development in the application of ferroelectric thin films for electronic devices and discuss the physics relevant for the performance and failure of these devices. Following this the review covers the enormous progress that has been made in the first-principles computational approach to understanding ferroelectrics. The authors then discuss in detail the important role that strain plays in determining the properties of epitaxial thin ferroelectric films. Finally, this review ends with a look at the emerging possibilities for nanoscale ferroelectrics, with particular emphasis on ferroelectrics in nonconventional nanoscale geometries.

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    DOI:https://doi.org/10.1103/RevModPhys.77.1083

    ©2005 American Physical Society

    Authors & Affiliations

    M. Dawber*

    • DPMC, University of Geneva, CH-1211, Geneva 4, Switzerland

    K. M. Rabe

    • Department of Physics and Astronomy, Rutgers University, Piscataway, New Jersey 00854-8019, USA

    J. F. Scott

    • Department of Earth Sciences, University of Cambridge, Cambridge CB2 3EQ, United Kingdom

    • *Electronic address: matthew.dawber@physics.unige.ch
    • Electronic address: rabe@physics.rutgers.edu
    • Electronic address: jsco99@esc.cam.ac.uk

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    Issue

    Vol. 77, Iss. 4 — October - December 2005

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