Electronic properties of two-dimensional systems

Tsuneya Ando, Alan B. Fowler, and Frank Stern
Rev. Mod. Phys. 54, 437 – Published 1 April 1982
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Abstract

The electronic properties of inversion and accumulation layers at semiconductor-insulator interfaces and of other systems that exhibit two-dimensional or quasi-two-dimensional behavior, such as electrons in semiconductor heterojunctions and superlattices and on liquid helium, are reviewed. Energy levels, transport properties, and optical properties are considered in some detail, especially for electrons at the (100) silicon-silicon dioxide interface. Other systems are discussed more briefly.

    DOI:https://doi.org/10.1103/RevModPhys.54.437

    ©1982 American Physical Society

    Authors & Affiliations

    Tsuneya Ando*

    • Institute of Applied Physics, University of Tsukuba, Sakura, Ibaraki 305, Japan and IBM Thomas J Watson Research Center, Yorktown Heights, New York 10598

    Alan B. Fowler and Frank Stern

    • IBM Thomas J. Watson Research Center, Yorktown Heights, New York 10598

    • *Permanent address.

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    Issue

    Vol. 54, Iss. 2 — April - June 1982

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