Abstract
Polar catastrophe at the interface of oxide materials with strongly correlated electrons has triggered a flurry of new research activities. The expectations are that the design of such advanced interfaces will become a powerful route to engineer devices with novel functionalities. Here, we investigate the initial stages of growth and the electronic structure of the spintronic interface. Using soft x-ray absorption spectroscopy, we have discovered that the so-called A-sites are completely missing in the first monolayer. This discovery allows us to develop an unexpected but elegant growth principle in which, during deposition, the Fe atoms are constantly on the move to solve the divergent electrostatic potential problem, thereby ensuring epitaxy and stoichiometry at the same time. This growth principle provides a new perspective for the design of interfaces.
- Received 14 September 2015
DOI:https://doi.org/10.1103/PhysRevX.6.041011
Published by the American Physical Society under the terms of the Creative Commons Attribution 3.0 License. Further distribution of this work must maintain attribution to the author(s) and the published article’s title, journal citation, and DOI.
Published by the American Physical Society
Physics Subject Headings (PhySH)
Popular Summary
The physical properties of the surfaces and interfaces of a solid can markedly differ from those in the solid’s bulk, particularly in cases when the surface or interface involves non-neutral crystal planes. For insulators, the stacking of such polar planes causes the electrostatic potential to diverge, and this so-called “polar catastrophe” destabilizes the system in a dramatic manner. This situation results in the surface or interface behaving very differently from that of the bulk. The polar catastrophe presents an opportunity to design new interfaces with potential for new emergent phenomena, provided that we understand the atomic structure and growth modes of polar interfaces. Here, we investigate the polar interface between and the MgO (001) substrate, one of the most commonly used interfaces in spintronics.
We use molecular beam epitaxy to ensure layer-by-layer growth of films only a few angstroms thick in ultraclean conditions. Using soft x-ray absorption spectroscopy, we discover that certain types of Fe ions are missing in the first monolayer. Together with data from thicker films, we propose an unexpected but elegant growth principle in which not only the surface but also the subsurface Fe atoms are constantly on the move during deposition to solve the divergent electrostatic potential problem. Having identified this “dynamic atomic reconstruction” growth principle, we conclude that we truly have to think differently and openly about how polar interfaces can grow.
We expect that our findings will be useful in the research field of thin-film devices and nanoscience to create novel functionalities.