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Purified self-amplified spontaneous emission free-electron lasers with slippage-boosted filtering

Dao Xiang, Yuantao Ding, Zhirong Huang, and Haixiao Deng
Phys. Rev. ST Accel. Beams 16, 010703 – Published 22 January 2013

Abstract

We propose a simple method to significantly enhance the temporal coherence and spectral brightness of a self-amplified spontaneous emission (SASE) free-electron laser (FEL). In this purified SASE (pSASE) FEL, a few undulator sections (called slippage-boosted sections) resonant at a subharmonic of the FEL radiation are used in the middle stage of the exponential growth regime to amplify the radiation while simultaneously reducing the FEL bandwidth. In this slippage-boosted section, the average longitudinal velocity of electrons is reduced, which effectively increases the FEL slippage length that allows the radiation fields initially far apart to create a phase relation, leading to n times increase in FEL cooperation length, where n is the ratio of the resonant wavelength of the slippage-boosted section to that of the original FEL radiation. The purified radiation, as a seed with improved temporal coherence, is further amplified to saturation in the undulator sections tuned to the FEL wavelength. Using the linac coherent light source II (LCLS-II) parameters as an example, we show that with the proposed configuration the temporal coherence and spectral brightness of a SASE FEL can be significantly enhanced. This scheme may be applied to many SASE FEL light sources to enhance the FEL performance.

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  • Received 9 December 2012

DOI:https://doi.org/10.1103/PhysRevSTAB.16.010703

This article is available under the terms of the Creative Commons Attribution 3.0 License. Further distribution of this work must maintain attribution to the author(s) and the published article’s title, journal citation, and DOI.

Published by the American Physical Society

Authors & Affiliations

Dao Xiang, Yuantao Ding, and Zhirong Huang

  • SLAC National Accelerator Laboratory, Menlo Park, California 94025, USA

Haixiao Deng

  • Shanghai Institute of Applied Physics, Chinese Academy of Sciences, Shanghai, 201800, China

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Issue

Vol. 16, Iss. 1 — January 2013

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