• Open Access

Transverse ultrafast laser inscription in bulk silicon

M. Chambonneau, M. Blothe, Q. Li, V. Yu. Fedorov, T. Heuermann, M. Gebhardt, C. Gaida, S. Tertelmann, F. Sotier, J. Limpert, S. Tzortzakis, and S. Nolte
Phys. Rev. Research 3, 043037 – Published 14 October 2021

Abstract

In-volume ultrafast laser direct writing of silicon is generally limited by strong nonlinear propagation effects preventing the production of modifications. By using advantageous spectral, temporal, and spatial conditions, we demonstrate that modifications can be repeatably produced inside silicon. Our approach relies on irradiation at 2 μm wavelength with temporally distorted femtosecond pulses. These pulses are focused in a way that spherical aberrations of different origins mutually balance, as predicted by point spread function analyses and in good agreement with nonlinear propagation simulations. We also establish the laws governing modification growth on a pulse-to-pulse basis, which allows us to demonstrate transverse inscription inside silicon with various line morphologies depending on the irradiation conditions. We finally show that the production of single-pulse repeatable modifications is a necessary condition for reliable transverse inscription inside silicon.

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  • Received 30 April 2021
  • Revised 30 July 2021
  • Accepted 9 September 2021

DOI:https://doi.org/10.1103/PhysRevResearch.3.043037

Published by the American Physical Society under the terms of the Creative Commons Attribution 4.0 International license. Further distribution of this work must maintain attribution to the author(s) and the published article's title, journal citation, and DOI.

Published by the American Physical Society

Physics Subject Headings (PhySH)

Atomic, Molecular & OpticalPlasma PhysicsGeneral PhysicsNonlinear Dynamics

Authors & Affiliations

M. Chambonneau1,*, M. Blothe1, Q. Li1, V. Yu. Fedorov2,3, T. Heuermann1,4, M. Gebhardt1,4, C. Gaida5, S. Tertelmann6, F. Sotier6, J. Limpert1,4,7, S. Tzortzakis2,8,9, and S. Nolte1,7

  • 1Institute of Applied Physics, Abbe Center of Photonics, Friedrich Schiller University Jena, Albert-Einstein-Straße 15, 07745 Jena, Germany
  • 2Science Program, Texas A&M University at Qatar, P.O. Box 23874, Doha, Qatar
  • 3P. N. Lebedev Physical Institute of the Russian Academy of Sciences, 53 Leninskiy Prospekt, 119991 Moscow, Russia
  • 4Helmholtz-Institute Jena, Fröbelstieg 3, 07743 Jena, Germany
  • 5Active Fiber Systems GmbH, Ernst-Ruska-Ring 17, 07745 Jena, Germany
  • 6Innolas Photonics GmbH, Justus-von-Liebig-Ring 8, 82152 Krailling, Germany
  • 7Fraunhofer Institute for Applied Optics and Precision Engineering IOF, Center of Excellence in Photonics, Albert-Einstein-Straße 7, 07745 Jena, Germany
  • 8Institute of Electronic Structure and Laser (IESL), Foundation for Research and Technology–Hellas (FORTH), P.O. Box 1527, GR-71110 Heraklion, Greece
  • 9Materials Science and Technology Department, University of Crete, 71003 Heraklion, Greece

  • *maxime.chambonneau@hotmail.fr

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Vol. 3, Iss. 4 — October - December 2021

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