Second-order topological insulators in two-dimensional monolayers of the 1T-phase PtSe2 material class

Guozhi Long, Mingxiang Pan, Hui Zeng, and Huaqing Huang
Phys. Rev. Materials 8, 044203 – Published 22 April 2024

Abstract

Two-dimensional (2D) second-order topological insulators (SOTIs) have been extensively studied due to their unique feature of fractional charge at corners. In order to realize such kind of SOTI in natural materials, we reveal a class of experimentally synthesized 1T-phase transition metal dichalcogenides (TMDs) monolayers as candidates of SOTI. Taking the monolayer of 1T-PtSe2 as an example, we identify its second-order topology by determining the nonzero fractional corner charge using first-principles calculations and symmetry analysis. Furthermore, we emphasize the role of crystalline symmetry in the emergence of corner states based on an effective edge theory. Due to the same symmetry and similar band structure, our analysis can be directly applied to other 1T-TMD monolayers. Our findings uncover the previously overlooked higher-order topology in 2D 1T-TMD materials, which may draw immediate experimental attention.

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  • Received 1 January 2024
  • Accepted 3 April 2024

DOI:https://doi.org/10.1103/PhysRevMaterials.8.044203

©2024 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

Guozhi Long1, Mingxiang Pan1, Hui Zeng2, and Huaqing Huang1,3,4

  • 1School of Physics, Peking University, Beijing 100871, China
  • 2State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China
  • 3Collaborative Innovation Center of Quantum Matter, Beijing 100871, China
  • 4Center for High Energy Physics, Peking University, Beijing 100871, China

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Issue

Vol. 8, Iss. 4 — April 2024

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