Abstract
calculations show the presence of a strong magnetoelectric interfacial coupling in a ultrathin film grown on a strained ferroelectric film. This heterostructure presents a polarization driven magnetic transition from a G-type to an A-type antiferromagnetic structure. Together with this magnetic transition we find a metallic behavior at the interface between these two insulators, where the charge character of the carriers can be tuned from electrons to holes by switching the electric polarization direction of the ferroelectric film. Besides, the electron gas is spin polarized while the hole gas is not.
- Received 21 December 2023
- Revised 19 February 2024
- Accepted 22 February 2024
DOI:https://doi.org/10.1103/PhysRevMaterials.8.034408
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