Abstract
The generation of single-photon emitters in hexagonal boron nitride around 2 eV emission is experimentally well recognized; however, the atomic nature of these emitters is unknown. In this Letter, we use first-principles calculations to demonstrate that carbon trimer substitutional defect () is a possible source of 2 eV single-photon emitter in hBN. We showcase the calculations of a complete set of static and dynamical properties related to quantum defects, including exciton-defect couplings and electron-phonon interactions, from both density functional theory and many-body perturbation theory. In particular, we show that it is critical to consider both radiative and nonradiative processes when comparing with experimental lifetime for known 2 eV emitters. We find that has several key physical properties matching the ones of experimentally observed single-photon emitters. These include the zero-phonon line (2.13 eV), Huang-Rhys factor (1.35), photoluminescence lifetime (2.19 ns), phonon-sideband energy (180 meV), and photoluminescence spectrum. The identification of defect candidates for 2 eV emission paves the way for controllable single-photon emission generation.
- Received 30 September 2021
- Accepted 5 April 2022
- Corrected 13 October 2022
DOI:https://doi.org/10.1103/PhysRevMaterials.6.L042201
©2022 American Physical Society
Physics Subject Headings (PhySH)
Corrections
13 October 2022
Correction: A missing support statement has been inserted in the Acknowledgment section.