Magnetotransport and Berry phase tuning in Gd-doped Bi2Se3 topological insulator single crystals

Lei Chen, Shuang-Shuang Li, Weiyao Zhao, Abdulhakim Bake, David Cortie, Xiaolin Wang, Julie Karel, Han Li, and Ren-Kui Zheng
Phys. Rev. Materials 6, 054202 – Published 11 May 2022

Abstract

The Berry phase is an important concept in solids, correlated to the band topology, axion electrodynamics, and potential applications of topological materials. Here, we investigate the magnetotransport and Berry phase of rare earth element Gd-doped Bi2Se3 (Gd:Bi2Se3) topological insulators (TIs) at low temperatures and high magnetic fields. Gd:Bi2Se3 single crystals show Shubnikov–de Haas (SdH) oscillations with nontrivial Berry phase, while Bi2Se3 single crystals show zero Berry phase in SdH oscillations. A fitting of the temperature-dependent magnetization curves using the Curie-Weiss law reveals that the Gd dopants in the crystals show paramagnetism in the 3–300 K region, indicating that the origin of the Berry phase is not long-range magnetic ordering. Moreover, Gd doping has limited influence on the quantum oscillation parameters (e.g., frequency of oscillation, area of Fermi surface, effective electron mass, and Fermi wave vectors) but has a significant impact on the Hall mobility, carrier density, and band topology. Our results demonstrate that Gd doping can tune the Berry phase of TIs effectively, which may pave the way for the future realization of many predicted exotic transport phenomena of topological origin.

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  • Received 4 February 2022
  • Accepted 27 April 2022

DOI:https://doi.org/10.1103/PhysRevMaterials.6.054202

©2022 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

Lei Chen1, Shuang-Shuang Li2, Weiyao Zhao3,4, Abdulhakim Bake4,5, David Cortie4,5, Xiaolin Wang4,5, Julie Karel3, Han Li1,*, and Ren-Kui Zheng1,†

  • 1School of Physics and Materials Science, Guangzhou University, Guangzhou 510006, People's Republic of China
  • 2School of Materials Science and Engineering and Jiangxi Engineering Laboratory for Advanced Functional Thin Films, Nanchang University, Nanchang 330031, People's Republic of China
  • 3Department of Materials Science & Engineering, and ARC Centre of Excellence in Future Low-Energy Electronics Technologies, Monash University, Clayton, Victoria 3800, Australia
  • 4ISEM, University of Wollongong, North Wollongong, New South Wales 2500, Australia
  • 5ARC Centre of Excellence in Future Low-Energy Electronics Technologies, University of Wollongong, North Wollongong, New South Wales 2500, Australia

  • *lihan@gzhu.edu.cn
  • zrk@ustc.edu

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Issue

Vol. 6, Iss. 5 — May 2022

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