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Critical analysis of proximity-induced magnetism in MnTe/Bi2Te3 heterostructures

G. Awana, R. Fujita, A. Frisk, P. Chen, Q. Yao, A. J. Caruana, C. J. Kinane, N.-J. Steinke, S. Langridge, P. Olalde-Velasco, S. S. Dhesi, G. van der Laan, X. F. Kou, S. L. Zhang, T. Hesjedal, and D. Backes
Phys. Rev. Materials 6, 053402 – Published 11 May 2022
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Abstract

An elegant approach to overcome the intrinsic limitations of magnetically doped topological insulators is to bring a topological insulator in direct contact with a magnetic material. The aspiration is to realize the quantum anomalous Hall effect at high temperatures where the symmetry-breaking magnetic field is provided by a proximity-induced magnetization at the interface. Hence, a detailed understanding of the interfacial magnetism in such heterostructures is crucial, yet its distinction from structural and magnetic background effects is a rather nontrivial task. Here, we combine several magnetic characterization techniques to investigate the magnetic ordering in MnTe/Bi2Te3 heterostructures. A magnetization profile of the layer stack is obtained using depth-sensitive polarized neutron reflectometry. The magnetic constituents are characterized in more detail using element-sensitive magnetic x-ray spectroscopy. Magnetotransport measurements provide additional information about the magnetic transitions. We find that the supposedly antiferromagnetic MnTe layer does not exhibit an x-ray magnetic linear dichroic signal, raising doubt that it is in its antiferromagnetic state. Instead, Mn seems to penetrate into the surface region of the Bi2Te3 layer. Furthermore, the interface between MnTe and Bi2Te3 is not abrupt, but extending over 2.2 nm. These conditions are the likely reason that we do not observe proximity-induced magnetization at the interface. Our findings illustrate the importance of not solely relying on one single technique as proof for proximity-induced magnetism at interfaces. We demonstrate that a holistic, multitechnique approach is essential to gain a more complete picture of the magnetic structure in which the interface is embedded.

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  • Received 26 January 2022
  • Revised 18 March 2022
  • Accepted 25 April 2022

DOI:https://doi.org/10.1103/PhysRevMaterials.6.053402

Published by the American Physical Society under the terms of the Creative Commons Attribution 4.0 International license. Further distribution of this work must maintain attribution to the author(s) and the published article's title, journal citation, and DOI.

Published by the American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

G. Awana1,*, R. Fujita2,*, A. Frisk3, P. Chen4, Q. Yao5, A. J. Caruana6, C. J. Kinane6, N.-J. Steinke7, S. Langridge6, P. Olalde-Velasco3,†, S. S. Dhesi3, G. van der Laan3, X. F. Kou8, S. L. Zhang5, T. Hesjedal2, and D. Backes3,‡

  • 1Department of Physics, Loughborough University, Loughborough LE11 3TU, United Kingdom
  • 2Department of Physics, Clarendon Laboratory, University of Oxford, Oxford OX1 3PU, United Kingdom
  • 3Diamond Light Source, Harwell Science and Innovation Campus, Didcot OX11 0DE, United Kingdom
  • 4School of Information Science and Technology, ShanghaiTech University, Shanghai 200031, China
  • 5School of Physical Science and Technology, ShanghaiTech Laboratory for Topological Physics, ShanghaiTech University, Shanghai 200031, China
  • 6ISIS, Rutherford Appleton Laboratory, Harwell Science and Innovation Campus, Science and Technology Facilities Council, Oxon OX11 0QX, United Kingdom
  • 7Institut Laue-Langevin, 38042 Grenoble Cedex 9, France
  • 8School of Information Science and Technology and ShanghaiTech Laboratory for Topological Physics, ShanghaiTech University, Shanghai 200031, China

  • *G. Awana and R. Fujita contributed equally to this work.
  • Present address: Departamento de Ciencias Químicas, Universidad Nacional Autónoma de México, Cuautitlán Izcalli, 54740, México.
  • dirk.backes@diamond.ac.uk

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Vol. 6, Iss. 5 — May 2022

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