Single-domain perpendicular magnetization induced by the coherent O 2p-Ru 4d hybridized state in an ultra-high-quality SrRuO3 film

Yuki K. Wakabayashi, Masaki Kobayashi, Yukiharu Takeda, Kosuke Takiguchi, Hiroshi Irie, Shin-ichi Fujimori, Takahito Takeda, Ryo Okano, Yoshiharu Krockenberger, Yoshitaka Taniyasu, and Hideki Yamamoto
Phys. Rev. Materials 5, 124403 – Published 2 December 2021
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Abstract

We investigated the Ru 4d and O 2p electronic structure and magnetic properties of an ultrahigh-quality SrRuO3 film on SrTiO3 grown by machine-learning assisted molecular-beam epitaxy. The high itinerancy and long quantum lifetimes of the quasiparticles in the Ru 4d t2g-O 2p hybridized valence band are confirmed by observing the prominent well-screened peak in the Ru 3d core-level photoemission spectrum, the coherent peak near the Fermi energy in the valence-band spectrum, and quantum oscillations in the resistivity. The element-specific magnetic properties and the hybridization between the Ru 4d and O 2p orbitals were characterized by Ru M2,3-edge and O K-edge soft x-ray absorption spectroscopy and x-ray magnetic circular dichroism measurements. The ultrahigh-quality SrRuO3 film with the residual resistivity ratio of 86 shows the large orbital magnetic moment of oxygen ions induced by the strong orbital hybridization of the O 2p states with the spin-polarized Ru 4d t2g states. The film also shows single-domain perpendicular magnetization with an almost ideal remanent magnetization ratio of 0.97. These results provide detailed insights into the relevance between orbital hybridization and the perpendicular magnetic anisotropy in SrRuO3/SrTiO3 systems.

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  • Received 10 August 2021
  • Accepted 10 November 2021

DOI:https://doi.org/10.1103/PhysRevMaterials.5.124403

©2021 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

Yuki K. Wakabayashi1,*,†, Masaki Kobayashi2,3,*,‡, Yukiharu Takeda4, Kosuke Takiguchi1, Hiroshi Irie1, Shin-ichi Fujimori4, Takahito Takeda3, Ryo Okano3, Yoshiharu Krockenberger1, Yoshitaka Taniyasu1, and Hideki Yamamoto1

  • 1NTT Basic Research Laboratories, NTT Corporation, Atsugi, Kanagawa 243-0198, Japan
  • 2Center for Spintronics Research Network, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
  • 3Department of Electrical Engineering and Information Systems, The University of Tokyo, Bunkyo, Tokyo 113-8656, Japan
  • 4Materials Sciences Research Center, Japan Atomic Energy Agency, Sayo-gun, Hyogo 679-5148, Japan

  • *These authors contributed equally to this work.
  • Corresponding author: yuuki.wakabayashi.we@hco.ntt.co.jp
  • Corresponding author: masaki.kobayashi@ee.t.u-tokyo.ac.jp

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Issue

Vol. 5, Iss. 12 — December 2021

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