Insights into the atomic structure of the interface of ferroelectric Hf0.5Zr0.5O2 grown epitaxially on La2/3Sr1/3MnO3

Saúl Estandía, Tengfei Cao, Rohan Mishra, Ignasi Fina, Florencio Sánchez, and Jaume Gazquez
Phys. Rev. Materials 5, 074410 – Published 28 July 2021
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Abstract

Epitaxial growth of Hf0.5Zr0.5O2 (HZO) thin films allows for the stabilization of the metastable orthorhombic phase with robust ferroelectric properties. So far, the ferroelectric phase is most commonly stabilized on perovskite substrates upon insertion of a buffer layer of La2/3Sr1/3MnO3 (LSMO); however, little is known about the role played by the LSMO buffer layer and the interface between HZO and LSMO. Inspection of a HZO/LSMO/SrTiO3 heterostructure by scanning transmission electron microscope imaging and electron energy loss spectroscopy shows that, despite the substantial structural mismatch between HZO and LSMO, the interface between them is relatively sharp spanning ∼2 atomic layers. The LSMO surface, expected to be mostly MnO2 terminated, undergoes a chemical reconstruction consisting of the substitution of the Mn cations by a mixture of Hf/Zr cations. Density functional theory calculations show that the substitution of Mn by Hf on the MnO2-terminated surface of LSMO is energetically favorable, as the higher electronegativity and valence of Hf with respect to Mn balances the surface charge of the MnO2 layer.

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  • Received 13 April 2021
  • Revised 2 June 2021
  • Accepted 9 July 2021

DOI:https://doi.org/10.1103/PhysRevMaterials.5.074410

©2021 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

Saúl Estandía1,*,†, Tengfei Cao2,*, Rohan Mishra2,‡, Ignasi Fina1, Florencio Sánchez1, and Jaume Gazquez1

  • 1Institut de Ciència de Materials de Barcelona (ICMAB-CSIC), Campus UAB, Bellaterra, 08193 Barcelona, Spain
  • 2Department of Mechanical Engineering & Materials Science, and Institute of Materials Science & Engineering, Washington University in St. Louis, One Brookings Drive, St. Louis, Missouri 63130, USA

  • *These authors contributed equally to this work.
  • Corresponding author: saul.estandia@gmail.com
  • Corresponding author: rmishra@wustl.edu

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Issue

Vol. 5, Iss. 7 — July 2021

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