Controlling the electronic interface properties of AlOx/SrTiO3 heterostructures

Berengar Leikert, Judith Gabel, Matthias Schmitt, Martin Stübinger, Philipp Scheiderer, Louis Veyrat, Tien-Lin Lee, Michael Sing, and Ralph Claessen
Phys. Rev. Materials 5, 065003 – Published 15 June 2021
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Abstract

Depositing disordered Al on top of SrTiO3 is a cheap and easy way to create a two-dimensional electron system in the SrTiO3 surface layers. To facilitate future device applications, we passivate the heterostructure by a disordered LaAlO3 capping layer to study the electronic properties by complementary x-ray photoemission spectroscopy and transport measurements on the very same samples. We also tune the electronic interface properties by adjusting the oxygen pressure during film growth.

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  • Received 18 December 2020
  • Revised 15 April 2021
  • Accepted 19 April 2021

DOI:https://doi.org/10.1103/PhysRevMaterials.5.065003

©2021 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied PhysicsInterdisciplinary Physics

Authors & Affiliations

Berengar Leikert1, Judith Gabel1,2, Matthias Schmitt1, Martin Stübinger1, Philipp Scheiderer1, Louis Veyrat1, Tien-Lin Lee2, Michael Sing1, and Ralph Claessen1

  • 1Physikalisches Institut and Würzburg-Dresden Cluster of Excellence ct.qmat, Universität Würzburg, D-97074 Würzburg, Germany
  • 2Diamond Light Source, Harwell Science and Innovation Campus, Didcot OX11 0DE, United Kingdom

See Also

Metal/SrTiO3 two-dimensional electron gases for spin-to-charge conversion

Luis M. Vicente-Arche, Srijani Mallik, Maxen Cosset-Cheneau, Paul Noël, Diogo C. Vaz, Felix Trier, Tanay A. Gosavi, Chia-Ching Lin, Dmitri E. Nikonov, Ian A. Young, Anke Sander, Agnès Barthélémy, Jean-Philippe Attané, Laurent Vila, and Manuel Bibes
Phys. Rev. Materials 5, 064005 (2021)

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Issue

Vol. 5, Iss. 6 — June 2021

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