Abstract
Depositing disordered Al on top of is a cheap and easy way to create a two-dimensional electron system in the surface layers. To facilitate future device applications, we passivate the heterostructure by a disordered capping layer to study the electronic properties by complementary x-ray photoemission spectroscopy and transport measurements on the very same samples. We also tune the electronic interface properties by adjusting the oxygen pressure during film growth.
- Received 18 December 2020
- Revised 15 April 2021
- Accepted 19 April 2021
DOI:https://doi.org/10.1103/PhysRevMaterials.5.065003
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