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Unit-cell-thick domain in free-standing quasi-two-dimensional ferroelectric material

Yuwei Guo, Berit Goodge, Lifu Zhang, Jie Jiang, Yu Chen, Lena F. Kourkoutis, and Jian Shi
Phys. Rev. Materials 5, 044403 – Published 12 April 2021
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Abstract

Two-dimensional (2D) and quasi-2D ferroelectric materials have demonstrated their potential for enabling device miniaturization. The fundamental understanding of the ferroelectric domain structure at atomic scale is limited, however, hindering development of functional device units at the microscopic level. In this paper, we employ a Dion–Jacobson layered oxide CsBiNb2O7 (CBNO), which has been predicted to be ferroelectric with high Curie temperature and large in-plane polarization, as a model system to study its ferroelectric domain structure with atomic scale analysis. We reveal the existence of unit-cell-thick ferroelectric domain size as well as both 180° and 90° domain walls in free-standing CBNO. In an epitaxial CBNO film grown on a LaAlO3 substrate, we discover multiple stacking structures resembling the Aurivillius and the Ruddlesden–Popper phases. We also analyze the interfacial dislocations and their associated lattice distortion fields in the epitaxial film. This paper may inspire design concepts for ferroelectric devices demanding unit-cell-thick domain size.

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  • Received 6 October 2020
  • Revised 18 February 2021
  • Accepted 24 March 2021

DOI:https://doi.org/10.1103/PhysRevMaterials.5.044403

©2021 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

Yuwei Guo1, Berit Goodge2,3, Lifu Zhang1, Jie Jiang1, Yu Chen4, Lena F. Kourkoutis2,3, and Jian Shi1,5,*

  • 1Department of Materials Science and Engineering, Rensselaer Polytechnic Institute, Troy, New York 12180, USA
  • 2School of Applied and Engineering Physics, Cornell University, Ithaca, New York 14853, USA
  • 3Kavli Institute at Cornell for Nanoscale Science, Ithaca, New York 14853, USA
  • 4Department of Computer Science, Rensselaer Polytechnic Institute, Troy, New York 12180, USA
  • 5Center for Materials, Devices, and Integrated Systems, Rensselaer Polytechnic Institute, Troy, New York 12180, USA

  • *Corresponding author: shij4@rpi.edu

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Issue

Vol. 5, Iss. 4 — April 2021

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