Tuning the structural and antiferromagnetic phase transitions in UCr2Si2: Hydrostatic pressure and chemical substitution

Y. Lai, K. Wei, G. Chappell, J. Diaz, T. Siegrist, P. J. W. Moll, D. Graf, and R. E. Baumbach
Phys. Rev. Materials 4, 075003 – Published 24 July 2020
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Abstract

Structural phase transitions in f-electron materials have attracted sustained attention both for practical and basic science reasons, including the fact that they offer an environment to directly investigate relationships between structure and the f-state. Here we present results for UCr2Si2, where structural (tetragonal monoclinic) and antiferromagnetic phase transitions are seen at TS=205 K and TN=25 K, respectively. We also provide evidence for an additional second-order phase transition at TX=280 K. We show that TX, TS, and TN respond in distinct ways to the application of hydrostatic pressure and CrRu chemical substitution. In particular, hydrostatic compression increases the structural ordering temperature, eventually causes it to merge with TX, and destroys the antiferromagnetism. In contrast, chemical substitution in the series UCr2xRuxSi2 suppresses both TS and TN, causing them to approach zero temperature near x0.16 and 0.08, respectively. The distinct TP and Tx phase diagrams are related to the evolution of the rigid Cr-Si and Si-Si substructures, where applied pressure semiuniformly compresses the unit cell, and CrRu substitution results in uniaxial lattice compression along the tetragonal c-axis and an expansion in the ab-plane. These results provide insights into an interesting class of strongly correlated quantum materials in which degrees of freedom associated with f-electron magnetism, strong electronic correlations, and structural instabilities are readily controlled.

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  • Received 25 November 2019
  • Revised 18 June 2020
  • Accepted 6 July 2020

DOI:https://doi.org/10.1103/PhysRevMaterials.4.075003

©2020 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

Y. Lai1,2, K. Wei1, G. Chappell1,2, J. Diaz3, T. Siegrist1,2, P. J. W. Moll3, D. Graf1, and R. E. Baumbach1,2,*

  • 1National High Magnetic Field Laboratory, Florida State University, Tallahassee, Florida 32310, USA
  • 2Department of Physics, Florida State University, Tallahassee, Florida 32306, USA
  • 3Institute of Materials (IMX), EPFL, Lausanne, Switzerland

  • *baumbach@magnet.fsu.edu

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Issue

Vol. 4, Iss. 7 — July 2020

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