Pressure effect on the anomalous Hall effect of ferromagnetic Weyl semimetal Co3Sn2S2

Z. Y. Liu, T. Zhang, S. X. Xu, P. T. Yang, Q. Wang, H. C. Lei, Y. Sui, Y. Uwatoko, B. S. Wang, H. M. Weng, J. P. Sun, and J.-G. Cheng
Phys. Rev. Materials 4, 044203 – Published 28 April 2020
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Abstract

The magnetic Weyl semimetal Co3Sn2S2 exhibits large anomalous Hall effect (AHE) due to its nontrivial band topology with enhanced Berry curvature. Here we investigate the pressure effect on the AHE of Co3Sn2S2 up to 12 GPa with a palm cubic anvil cell apparatus and first-principles calculations simulation. We find that both the ferromagnetic transition temperature and the AHE are suppressed monotonically upon the application of high pressure. Data analyses revealed that in the investigated pressure range the intrinsic mechanism due to Berry curvature dominates the AHE as reflected by the validation of ρxyAρxx2. However, both the anomalous Hall conductivity and anomalous Hall angle are reduced gradually into the regime for conventional ferromagnetic metals with trivial band topology. Combined with theoretical calculations, our results indicate that the distance between Weyl points with opposite chirality in Co3Sn2S2 is substantially reduced accompanying the suppression of ferromagnetism by pressure, thus providing an experimental route to tune the AHE of magnetic Weyl semimetals via modifying the nontrivial band topology.

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  • Received 11 December 2019
  • Accepted 9 April 2020

DOI:https://doi.org/10.1103/PhysRevMaterials.4.044203

©2020 American Physical Society

Physics Subject Headings (PhySH)

  1. Research Areas
  1. Physical Systems
Condensed Matter, Materials & Applied Physics

Authors & Affiliations

Z. Y. Liu1,2,*, T. Zhang1,3,*, S. X. Xu1,3, P. T. Yang1,3, Q. Wang4, H. C. Lei4, Y. Sui2, Y. Uwatoko5, B. S. Wang1,3,6, H. M. Weng1,3,6,7,†, J. P. Sun1,3,‡, and J.-G. Cheng1,3,6

  • 1Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
  • 2School of Physics, Harbin Institute of Technology, Harbin 150001, China
  • 3School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, China
  • 4Department of Physics and Beijing Key Laboratory of Opto-electronic Functional Materials & Micro-nano Devices, Renmin University of China, 100872 Beijing, China
  • 5Institute for Solid State Physics, University of Tokyo, Kashiwa, Chiba 277–8581, Japan
  • 6Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China
  • 7CAS Center for Excellence in Topological Quantum Computation, University of Chinese Academy of Sciences, Beijing 100190, China

  • *These authors contributed equally to this work.
  • hmweng@iphy.ac.cn
  • jpsun@iphy.ac.cn

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Issue

Vol. 4, Iss. 4 — April 2020

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