Suppression of the antiferromagnetic metallic state in the pressurized MnBi2Te4 single crystal

K. Y. Chen, B. S. Wang, J.-Q. Yan, D. S. Parker, J.-S. Zhou, Y. Uwatoko, and J.-G. Cheng
Phys. Rev. Materials 3, 094201 – Published 3 September 2019

Abstract

We study the effect of hydrostatic pressure on the electrical transport, magnetic, and structural properties of MnBi2Te4 by measuring its resistivity, Hall effect, and x-ray diffraction under pressures up to 12.8 GPa supplemented by the first-principles calculations. At ambient pressure, MnBi2Te4 shows a metallic conducting behavior with a cusplike anomaly at around TN24K, where it undergoes a long-range antiferromagnetic (AF) transition. With increasing pressure, TN determined from the resistivity anomaly first increases slightly with a maximum at around 2 GPa and then decreases until vanishing completely at about 7 GPa. Intriguingly, its resistivity is enhanced gradually by pressure and even evolves from metallic to semimetal or semiconductinglike behavior as TN is suppressed. However, the density of the n-type charge carrier that remains dominant under pressure increases with pressure. In addition, the interlayer AF coupling seems to be strengthened under compression, since the critical field Hc1 for the spin-flop transition to the canted AF state is found to increase with pressure. No structural transition was evidenced up to 12.8 GPa, but some lattice softening was observed at about 2 GPa, signaling the occurrence of an electronic transition or crossover from a localized to itinerant state. We have rationalized these experimental findings by considering the pressure-induced enhancement of antiferromagnetic/ferromagnetic competition and partial delocalization of Mn3d electrons, which not only destroys long-range AF order but also promotes charge-carrier localization through enhanced spin fluctuations and/or the formation of a hybridization gap at high pressure.

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  • Received 9 July 2019

DOI:https://doi.org/10.1103/PhysRevMaterials.3.094201

©2019 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

K. Y. Chen1,5, B. S. Wang1,5,6, J.-Q. Yan2, D. S. Parker2, J.-S. Zhou3, Y. Uwatoko4, and J.-G. Cheng1,4,5,6,*

  • 1Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
  • 2Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USA
  • 3Materials Science and Engineering Program, Mechanical Engineering, University of Texas at Austin, Austin, Texas 78712, USA
  • 4Institute for Solid State Physics, University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa, Chiba 277-8581, Japan
  • 5School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, China
  • 6Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China

  • *jgcheng@iphy.ac.cn

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Issue

Vol. 3, Iss. 9 — September 2019

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