Optical Study of the Free-Carrier Response of LaTiO3/SrTiO3 Superlattices

S. S. A. Seo, W. S. Choi, H. N. Lee, L. Yu, K. W. Kim, C. Bernhard, and T. W. Noh
Phys. Rev. Lett. 99, 266801 – Published 26 December 2007

Abstract

We used infrared spectroscopic ellipsometry to investigate the electronic properties of LaTiO3/SrTiO3 superlattices (SLs). Our results indicated that, independent of the SL periodicity and individual layer thickness, the SLs exhibited a Drude metallic response with sheet carrier density per interface 3×1014cm2. This is probably due to the leakage of d electrons at interfaces from the Mott insulator LaTiO3 to the band insulator SrTiO3. We observed a carrier relaxation time 35fs and mobility 35cm2V1s1 at 10 K, and an unusual temperature dependence of carrier density that was attributed to the dielectric screening of quantum paraelectric SrTiO3.

  • Figure
  • Figure
  • Figure
  • Figure
  • Received 6 March 2007

DOI:https://doi.org/10.1103/PhysRevLett.99.266801

©2007 American Physical Society

Authors & Affiliations

S. S. A. Seo1,*, W. S. Choi1, H. N. Lee2, L. Yu3, K. W. Kim3, C. Bernhard3, and T. W. Noh1,†

  • 1ReCOE & FPRD, Department of Physics and Astronomy, Seoul National University, Seoul 151-747, Korea
  • 2Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USA
  • 3Department of Physics and Fribourg Center for Nanomaterials, University of Fribourg, 1700 Fribourg, Switzerland

  • *Present address: Max-Planck-Institute for Solid State Research, 70569 Stuttgart, Germany.
  • twnoh@snu.ac.kr

Article Text (Subscription Required)

Click to Expand

References (Subscription Required)

Click to Expand
Issue

Vol. 99, Iss. 26 — 31 December 2007

Reuse & Permissions
Access Options
Author publication services for translation and copyediting assistance advertisement

Authorization Required


×
×

Images

×

Sign up to receive regular email alerts from Physical Review Letters

Log In

Cancel
×

Search


Article Lookup

Paste a citation or DOI

Enter a citation
×