Bipolaron Mechanism for Organic Magnetoresistance

P. A. Bobbert, T. D. Nguyen, F. W. A. van Oost, B. Koopmans, and M. Wohlgenannt
Phys. Rev. Lett. 99, 216801 – Published 20 November 2007

Abstract

We present a mechanism for the recently discovered magnetoresistance in disordered π-conjugated materials, based on hopping of polarons and bipolaron formation, in the presence of the random hyperfine fields of the hydrogen nuclei and an external magnetic field. Within a simple model we describe the magnetic field dependence of the bipolaron density. Monte Carlo simulations including on-site and longer-range Coulomb repulsion show how this leads to positive and negative magnetoresistance. Depending on the branching ratio between bipolaron formation or dissociation and hopping rates, two different line shapes in excellent agreement with experiment are obtained.

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  • Received 4 June 2007

DOI:https://doi.org/10.1103/PhysRevLett.99.216801

©2007 American Physical Society

Authors & Affiliations

P. A. Bobbert1,2, T. D. Nguyen3, F. W. A. van Oost1,2, B. Koopmans2, and M. Wohlgenannt3,*

  • 1Group Polymer Physics and Eindhoven Polymer Laboratories, Technische Universiteit Eindhoven, P.O. Box 513, 5600 MB Eindhoven, The Netherlands
  • 2Department of Applied Physics, Technische Universiteit Eindhoven, P.O. Box 513, 5600 MB Eindhoven, The Netherlands
  • 3Department of Physics and Astronomy and Optical Science and Technology Center, University of Iowa, Iowa City, Iowa 52242-1479, USA

  • *markus-wohlgenannt@uiowa.edu

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Issue

Vol. 99, Iss. 21 — 23 November 2007

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