Dynamics of Step Bunching in Heteroepitaxial Growth on Vicinal Substrates

Mina Yoon, Ho Nyung Lee, Wei Hong, Hans M. Christen, Zhenyu Zhang, and Zhigang Suo
Phys. Rev. Lett. 99, 055503 – Published 3 August 2007

Abstract

When a heteroepitaxial film is grown on a vicinal substrate, the terrace steps at the growth front may bunch together to relieve strain, resulting in a rough surface. On the other hand, proper manipulation of the growth kinetics may suppress the inherent bunching instability, thus preserving step-flow growth. Here we show that the step dynamics in the early stages of growth can already determine whether the bunching instability is truly suppressed, prior to bunching actually taking place in the unstable regime. We determine the critical film thickness above which steps will bunch and exploit its scaling properties and usefulness for extracting intrinsic energy parameters. Experimental studies of SrRuO3 films grown on vicinal SrTiO3 substrates clearly establish the existence of the critical film thickness in step bunching.

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  • Received 5 February 2007

DOI:https://doi.org/10.1103/PhysRevLett.99.055503

©2007 American Physical Society

Authors & Affiliations

Mina Yoon1,2, Ho Nyung Lee1, Wei Hong3, Hans M. Christen1, Zhenyu Zhang1,2, and Zhigang Suo3

  • 1Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USA
  • 2Department of Physics and Astronomy, The University of Tennessee, Knoxville, Tennessee 37996, USA
  • 3Division of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts 02138, USA

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Issue

Vol. 99, Iss. 5 — 3 August 2007

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