Evidence of a Pressure-Induced Metallization Process in Monoclinic VO2

E. Arcangeletti, L. Baldassarre, D. Di Castro, S. Lupi, L. Malavasi, C. Marini, A. Perucchi, and P. Postorino
Phys. Rev. Lett. 98, 196406 – Published 10 May 2007

Abstract

Raman and combined infrared transmission and reflectivity measurements were carried out at room temperature (RT) on monoclinic VO2 over the 0–19 GPa and 0–14 GPa pressure ranges. Both lattice dynamics and optical gap show a remarkable stability up to P*10GPa whereas subtle modifications of V ion arrangements within the monoclinic lattice, together with the onset of a metallization process via band gap filling, are observed for P>P*. Differently from P=0, where the VO2 metallic phase is found only in conjunction with the rutile structure above 340 K, a new RT metallic phase within a monoclinic structure appears accessible in the high pressure regime.

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  • Received 17 November 2006

DOI:https://doi.org/10.1103/PhysRevLett.98.196406

©2007 American Physical Society

Authors & Affiliations

E. Arcangeletti1, L. Baldassarre1, D. Di Castro1, S. Lupi1, L. Malavasi2, C. Marini1, A. Perucchi1, and P. Postorino1

  • 1“Coherentia” CNR-INFM and Dipartimento di Fisica, Università di Roma La Sapienza, Piazzale Aldo Moro 2, I-00185 Roma, Italy
  • 2Dipartimento di Chimica Fisica “M. Rolla,” INSTM and IENI-CNR, Università di Pavia, Viale Taramelli 16, I-27100 Pavia, Italy

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Vol. 98, Iss. 19 — 11 May 2007

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