Electrical Spin Injection and Threshold Reduction in a Semiconductor Laser

M. Holub, J. Shin, D. Saha, and P. Bhattacharya
Phys. Rev. Lett. 98, 146603 – Published 5 April 2007
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Abstract

A spin-polarized vertical-cavity surface-emitting laser is demonstrated with electrical spin injection from an Fe/Al0.1Ga0.9As Schottky tunnel barrier. Laser operation with a spin-polarized current results in a maximum threshold current reduction of 11% and degree of circular polarization of 23% at 50 K. A cavity spin polarization of 16.8% is estimated from spin-dependent rate equation analysis of the observed threshold reduction.

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  • Received 26 September 2006

DOI:https://doi.org/10.1103/PhysRevLett.98.146603

©2007 American Physical Society

Authors & Affiliations

M. Holub, J. Shin, D. Saha, and P. Bhattacharya

  • Solid-State Electronics Laboratory, Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109-2122, USA

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Issue

Vol. 98, Iss. 14 — 6 April 2007

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