Spin-Hall Effect in a [110] GaAs Quantum Well

E. M. Hankiewicz, G. Vignale, and M. E. Flatté
Phys. Rev. Lett. 97, 266601 – Published 27 December 2006

Abstract

A self-consistent treatment of the spin-Hall effect requires consideration of the spin-orbit coupling and electron-impurity scattering on equal footing. This is done here for the experimentally relevant case of a [110] GaAs quantum well [Sih et al., Nature Phys. 1, 31 (2005)]. Working within the framework of the exact linear response formalism we calculate the spin-Hall conductivity including the Dresselhaus linear and cubic terms in the band structure, as well as the electron-impurity scattering and electron-electron interaction to all orders. We show that the spin-Hall conductivity naturally separates into two contributions, skew-scattering and side-jump, and we propose an experiment to distinguish between them.

  • Figure
  • Received 23 March 2006

DOI:https://doi.org/10.1103/PhysRevLett.97.266601

©2006 American Physical Society

Authors & Affiliations

E. M. Hankiewicz and G. Vignale

  • Department of Physics and Astronomy, University of Missouri, Columbia, Missouri 65211, USA*

M. E. Flatté

  • Department of Physics and Astronomy, University of Iowa, Iowa City, Iowa 52242, USA

  • *Electronic address: hankiewicze@missouri.edu

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Issue

Vol. 97, Iss. 26 — 31 December 2006

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