Landé g Tensor in Semiconductor Nanostructures

T. P. Mayer Alegre, F. G. G. Hernández, A. L. C. Pereira, and G. Medeiros-Ribeiro
Phys. Rev. Lett. 97, 236402 – Published 7 December 2006

Abstract

Understanding the electronic structure of semiconductor nanostructures is not complete without a detailed description of their corresponding spin-related properties. Here we explore the response of the shell structure of InAs self-assembled quantum dots to magnetic fields oriented in several directions, allowing mapping of the g-tensor modulus for the s and p shells. We find that the g tensors for the s and p shells exhibit a very different behavior. The s state, being more localized, probes the confinement potential details by sweeping the magnetic-field orientation from the growth direction towards the in-plane direction. For the p state, the g-tensor modulus is closer to that of the surrounding GaAs, consistent with a larger delocalization. In addition to the assessment of the g tensor, these results reveal further details of the confining potentials of self-assembled quantum dots that have not yet been probed.

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  • Received 24 April 2006

DOI:https://doi.org/10.1103/PhysRevLett.97.236402

©2006 American Physical Society

Authors & Affiliations

T. P. Mayer Alegre1,2, F. G. G. Hernández1,2, A. L. C. Pereira1, and G. Medeiros-Ribeiro1,*

  • 1Laboratório Nacional de Luz Síncrotron, Caixa Postal 6192, CEP 13084-971, Campinas, SP, Brazil
  • 2Instituto de Física Gleb Wataghin Universidade Estadual de Campinas, Campinas, SP, Brazil

  • *Corresponding author. Electronic address: gmedeiros@lnls.br

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Vol. 97, Iss. 23 — 8 December 2006

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