Domain Wall Creation in Nanostructures Driven by a Spin-Polarized Current

D. Ravelosona, S. Mangin, Y. Lemaho, J. A. Katine, B. D. Terris, and Eric E. Fullerton
Phys. Rev. Lett. 96, 186604 – Published 10 May 2006

Abstract

We report on current-driven magnetization reversal in nanopillars with elements having perpendicular magnetic anisotropy. Whereas only the two uniform magnetization states are available under the action of a magnetic field, we observed current-induced Bloch domain walls in pillars as small as 50×100nm2. This domain wall state can be further controlled by current to restore the uniform states. The ability to nucleate and manipulate domain walls by a current gives insight into the reversal mechanisms of small nanoelements and provides new prospects for ultrahigh density spintronic devices.

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  • Received 23 February 2006

DOI:https://doi.org/10.1103/PhysRevLett.96.186604

©2006 American Physical Society

Authors & Affiliations

D. Ravelosona1,2, S. Mangin1,3, Y. Lemaho1,2, J. A. Katine1, B. D. Terris1, and Eric E. Fullerton1

  • 1Hitachi Global Storage Technologies, San Jose Research Center, 650 Harry Road, San Jose, California 95120, USA
  • 2Institut d’Electronique Fondamentale, UMR CNRS 8622, Université Paris Sud, 91405 Orsay Cedex, France
  • 3LPM, U.H.P-Nancy I, B.P. 239 F-54506 Vandoeuvre cedex, France

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Issue

Vol. 96, Iss. 18 — 12 May 2006

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