Valence Band X-Ray Emission Spectra of Compressed Germanium

Viktor V. Struzhkin, Ho-kwang Mao, Jung-Fu Lin, Russell J. Hemley, John S. Tse, Yanming Ma, Michael Y. Hu, Paul Chow, and Chi-Chang Kao
Phys. Rev. Lett. 96, 137402 – Published 6 April 2006

Abstract

We report measurements of the valence band width in compressed Ge determined from x-ray emission spectra below the Ge K edge. The width of the valence band does not show any pressure dependence in the semiconducting diamond-type structure of Ge below 10 GPa. On the other hand, in the metallic β-Sn phase above 10 GPa the valence band width increases under compression. Density-functional calculations show an increasing valence band width under compression both in the semiconducting phase (contrary to experiment) and in the metallic β-Sn phase of Ge (in agreement with observed pressure-induced broadening). The pressure-independent valence band width in the semiconducting phase of Ge appears to require theoretical advances beyond the density-functional theory or the GW approximation.

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  • Received 9 March 2004

DOI:https://doi.org/10.1103/PhysRevLett.96.137402

©2006 American Physical Society

Authors & Affiliations

Viktor V. Struzhkin1, Ho-kwang Mao1, Jung-Fu Lin1,*, Russell J. Hemley1, John S. Tse2,†, Yanming Ma2,‡, Michael Y. Hu3, Paul Chow3, and Chi-Chang Kao4

  • 1Geophysical Laboratory, Carnegie Institution of Washington, 5251 Broad Branch Road NW, Washington, DC 20015, USA
  • 2Steacie Institute for Molecular Science, National Research Council of Canada, 100 Sussex Drive, Ottawa, Ontario, Canada K1A 0R6
  • 3HPCAT, Carnegie Institution of Washington, Advanced Photon Source, Argonne National Laboratory, Argonne, Illinois 60439, USA
  • 4NSLS, Brookhaven National Laboratory, Upton, New York 11973, USA

  • *Now at Lawrence Livermore National Laboratory, 7000 East Avenue, Livermore, CA 94550.
  • Now at the Department of Physics and Engineering Physics, University of Saskatchewan, Saskatoon, S7N 5E2, Canada.
  • Now at National High Pressure Laboratory, Jilin University, Changchun China.

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Issue

Vol. 96, Iss. 13 — 7 April 2006

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