Linear Magnetization Dependence of the Intrinsic Anomalous Hall Effect

Changgan Zeng, Yugui Yao, Qian Niu, and Hanno H. Weitering
Phys. Rev. Lett. 96, 037204 – Published 25 January 2006

Abstract

The anomalous Hall effect is investigated experimentally and theoretically for ferromagnetic thin films of Mn5Ge3. We have separated the intrinsic and extrinsic contributions to the experimental anomalous Hall effect and calculated the intrinsic anomalous Hall conductivity from the Berry curvature of the Bloch states using first-principles methods. The intrinsic anomalous Hall conductivity depends linearly on the magnetization, which can be understood from the long-wavelength fluctuations of the spin orientation at finite temperatures. The quantitative agreement between theory and experiment is remarkably good, not only near 0 K but also at finite temperatures, up to about 240K (0.8TC).

  • Figure
  • Figure
  • Figure
  • Figure
  • Received 21 October 2005

DOI:https://doi.org/10.1103/PhysRevLett.96.037204

©2006 American Physical Society

Authors & Affiliations

Changgan Zeng1, Yugui Yao2, Qian Niu3, and Hanno H. Weitering1,4

  • 1Department of Physics and Astronomy, The University of Tennessee, Knoxville, Tennessee 37996, USA
  • 2Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080, China
  • 3Department of Physics, University of Texas, Austin, Texas 78712, USA
  • 4Condensed Matter Sciences Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USA

Article Text (Subscription Required)

Click to Expand

References (Subscription Required)

Click to Expand
Issue

Vol. 96, Iss. 3 — 27 January 2006

Reuse & Permissions
Access Options
Author publication services for translation and copyediting assistance advertisement

Authorization Required


×
×

Images

×

Sign up to receive regular email alerts from Physical Review Letters

Log In

Cancel
×

Search


Article Lookup

Paste a citation or DOI

Enter a citation
×