Abstract
Gallium nitride films, epitaxially grown on Si(111) via a lattice-matched buffer layer by plasma-assisted molecular beam epitaxy, have been studied in situ by noncontact atomic force microscopy and also in real time by reflection high-energy electron diffraction. The grown films were determined to be always N-polar. First-principles theoretical calculations modeling the interface structure between GaN(0001) and clarify the origin of the N polarity.
- Received 13 July 2005
DOI:https://doi.org/10.1103/PhysRevLett.95.266105
©2005 American Physical Society