Surface and Interface Studies of GaN Epitaxy on Si(111) via ZrB2 Buffer Layers

Yukiko Yamada-Takamura, Z. T. Wang, Y. Fujikawa, T. Sakurai, Q. K. Xue, J. Tolle, P.-L. Liu, A. V. G. Chizmeshya, J. Kouvetakis, and I. S. T. Tsong
Phys. Rev. Lett. 95, 266105 – Published 28 December 2005

Abstract

Gallium nitride films, epitaxially grown on Si(111) via a lattice-matched ZrB2 buffer layer by plasma-assisted molecular beam epitaxy, have been studied in situ by noncontact atomic force microscopy and also in real time by reflection high-energy electron diffraction. The grown films were determined to be always N-polar. First-principles theoretical calculations modeling the interface structure between GaN(0001) and ZrB2(0001) clarify the origin of the N polarity.

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  • Received 13 July 2005

DOI:https://doi.org/10.1103/PhysRevLett.95.266105

©2005 American Physical Society

Authors & Affiliations

Yukiko Yamada-Takamura1, Z. T. Wang1, Y. Fujikawa1, T. Sakurai1, Q. K. Xue1,*, J. Tolle2, P.-L. Liu3, A. V. G. Chizmeshya4, J. Kouvetakis2, and I. S. T. Tsong3

  • 1Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan
  • 2Department of Chemistry and Biochemistry, Arizona State University, Tempe, Arizona 85287-1604, USA
  • 3Department of Physics and Astronomy, Arizona State University, Tempe, Arizona 85287-1504, USA
  • 4Center for Solid State Science, Arizona State University, Tempe, Arizona 85287-1704, USA

  • *Permanent address: Institute of Physics, Chinese Academy of Sciences, Beijing 100080, People’s Republic of China.

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Vol. 95, Iss. 26 — 31 December 2005

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