Abstract
The static configuration of ferroelectric domain walls was investigated using atomic force microscopy on epitaxial thin films. Measurements of domain wall roughness reveal a power-law growth of the correlation function of relative displacements with at short length scales , followed by an apparent saturation at large . In the same films, the dynamic exponent was found to be from independent measurements of domain wall creep. These results give an effective domain wall dimensionality of , in good agreement with theoretical calculations for a two-dimensional elastic interface in the presence of random-bond disorder and long-range dipolar interactions.
- Received 15 December 2004
DOI:https://doi.org/10.1103/PhysRevLett.94.197601
©2005 American Physical Society