Narrow Luminescence Linewidth of a Silicon Quantum Dot

Ilya Sychugov, Robert Juhasz, Jan Valenta, and Jan Linnros
Phys. Rev. Lett. 94, 087405 – Published 4 March 2005

Abstract

Single-dot luminescence spectroscopy was used to study the emission linewidth of individual silicon nanocrystals from low temperatures up to room temperature. The results show a continuous line narrowing towards lower temperatures with a linewidth as sharp as 2 meV at 35 K. This value, clearly below the thermal broadening at this temperature, proves the atomiclike emission from silicon quantum dots subject to quantum confinement. The low temperature measurements further reveal a 6meV replica, whose origin is discussed. In addition, an 60meV TO-phonon replica was detected, which is only present in a fraction of the dots.

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  • Received 25 August 2004

DOI:https://doi.org/10.1103/PhysRevLett.94.087405

©2005 American Physical Society

Authors & Affiliations

Ilya Sychugov1, Robert Juhasz1, Jan Valenta1,2, and Jan Linnros1

  • 1Laboratory of Materials and Semiconductor Physics, Royal Institute of Technology, SE-16440, Kista-Stockholm, Sweden
  • 2Faculty of Mathematics and Physics, Department of Chemical Physics and Optics, Charles University, Ke Karlovu 3, Prague 2, CZ-12116, Czech Republic

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Issue

Vol. 94, Iss. 8 — 4 March 2005

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