Electron-Phonon Interaction and Transport in Semiconducting Carbon Nanotubes

Vasili Perebeinos, J. Tersoff, and Phaedon Avouris
Phys. Rev. Lett. 94, 086802 – Published 2 March 2005

Abstract

We calculate the electron-phonon scattering and binding in semiconducting carbon nanotubes, within a tight-binding model. The mobility is derived using a multiband Boltzmann treatment. At high fields, the dominant scattering is interband scattering by LO phonons corresponding to the corners K of the graphene Brillouin zone. The drift velocity saturates at approximately half the graphene Fermi velocity. The calculated mobility as a function of temperature, electric field, and nanotube chirality are well reproduced by a simple interpolation formula. Polaronic binding give a band-gap renormalization of 70meV, an order of magnitude larger than expected. Coherence lengths can be quite long but are strongly energy dependent.

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  • Received 29 October 2004

DOI:https://doi.org/10.1103/PhysRevLett.94.086802

©2005 American Physical Society

Authors & Affiliations

Vasili Perebeinos, J. Tersoff, and Phaedon Avouris*

  • IBM Research Division, T. J. Watson Research Center, Yorktown Heights, New York 10598, USA

  • *Electronic address: avouris@us.ibm.com

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Issue

Vol. 94, Iss. 8 — 4 March 2005

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