Highly Spin-Polarized Room-Temperature Tunnel Injector for Semiconductor Spintronics using MgO(100)

X. Jiang, R. Wang, R. M. Shelby, R. M. Macfarlane, S. R. Bank, J. S. Harris, and S. S. P. Parkin
Phys. Rev. Lett. 94, 056601 – Published 11 February 2005

Abstract

The spin polarization of current injected into GaAs from a CoFe/MgO(100) tunnel injector is inferred from the electroluminescence polarization from GaAs/AlGaAs quantum well detectors. The polarization reaches 57% at 100 K and 47% at 290 K in a 5 T perpendicular magnetic field. Taking into account the field dependence of the luminescence polarization, the spin injection efficiency is at least 52% at 100 K, and 32% at 290 K. We find a nonmonotonic temperature dependence of the polarization which can be attributed to spin relaxation in the quantum well detectors.

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  • Received 24 January 2004

DOI:https://doi.org/10.1103/PhysRevLett.94.056601

©2005 American Physical Society

Authors & Affiliations

X. Jiang1,2, R. Wang1,2, R. M. Shelby1, R. M. Macfarlane1, S. R. Bank2, J. S. Harris2, and S. S. P. Parkin1,*

  • 1IBM Research Division, Almaden Research Center, San Jose, California 95120, USA
  • 2Solid State and Photonics Laboratory, Stanford University, Stanford, California 94305, USA

  • *Electronic address: parkin@almaden.ibm.com

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Vol. 94, Iss. 5 — 11 February 2005

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