Abstract
The spin polarization of current injected into GaAs from a tunnel injector is inferred from the electroluminescence polarization from quantum well detectors. The polarization reaches 57% at 100 K and 47% at 290 K in a 5 T perpendicular magnetic field. Taking into account the field dependence of the luminescence polarization, the spin injection efficiency is at least 52% at 100 K, and 32% at 290 K. We find a nonmonotonic temperature dependence of the polarization which can be attributed to spin relaxation in the quantum well detectors.
- Received 24 January 2004
DOI:https://doi.org/10.1103/PhysRevLett.94.056601
©2005 American Physical Society