Resonant States in the Electronic Structure of the High Performance Thermoelectrics AgPbmSbTe2+m: The Role of Ag-Sb Microstructures

Daniel Bilc, S. D. Mahanti, Eric Quarez, Kuei-Fang Hsu, Robert Pcionek, and M. G. Kanatzidis
Phys. Rev. Lett. 93, 146403 – Published 27 September 2004

Abstract

Ab initio electronic structure calculations based on gradient corrected density-functional theory were performed on a class of novel quaternary compounds AgPbmSbTe2+m, which were found to be excellent high temperature thermoelctrics with a large figure of merit ZT2.2 at 800 K. We find that resonant states appear near the top of the valence and bottom of the conduction bands of bulk PbTe when Ag and Sb replace Pb. These states can be understood in terms of modified Te-Ag(Sb) bonds. The electronic structure near the gap depends sensitively on the microstructural arrangements of Ag-Sb atoms, suggesting that large ZT values may originate from the nature of these ordering arrangements.

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  • Received 10 June 2004

DOI:https://doi.org/10.1103/PhysRevLett.93.146403

©2004 American Physical Society

Authors & Affiliations

Daniel Bilc1, S. D. Mahanti1, Eric Quarez2, Kuei-Fang Hsu2, Robert Pcionek2, and M. G. Kanatzidis2

  • 1Department of Physics and Astronomy, Michigan State University, East Lansing, Michigan 48824, USA
  • 2Department of Chemistry, Michigan State University, East Lansing, Michigan 48824, USA

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Issue

Vol. 93, Iss. 14 — 1 October 2004

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