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Quantum Interference Effects in the Magnetopiezoresistance of InAs/AlGaSb Quasi-One-Dimensional Electron Systems

H. Yamaguchi, Y. Tokura, S. Miyashia, and Y. Hirayama
Phys. Rev. Lett. 93, 036603 – Published 16 July 2004
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Abstract

We measured the low temperature magnetopiezoresistance of a quasi-one-dimensional electron system by fabricating an InAs/AlGaSb micromechanical cantilever. The magnetopiezoresistance curve showed aperiodic but reproducible oscillation, which was similar to the differential magnetoresistance curve obtained for the same device. A detailed comparison with model calculations strongly suggests that the quantum interference effects that cause the conductance fluctuations in the magnetoresistance are responsible for the peculiar behavior of the magnetopiezoresistance.

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  • Received 19 December 2003

DOI:https://doi.org/10.1103/PhysRevLett.93.036603

©2004 American Physical Society

Authors & Affiliations

H. Yamaguchi and Y. Tokura

  • NTT Basic Research Laboratories, NTT Corporation, Atsugi-shi, Kanagawa 243-0198, Japan

S. Miyashia

  • NTT Advanced Technology, Atsugi-shi, Kanagawa 243-0198, Japan

Y. Hirayama

  • NTT Basic Research Laboratories, NTT Corporation, Atsugi-shi, Kanagawa 243-0198 and SORST-JST, Kawaguchi-shi, Saitama 331-0012, Japan

See Also

Raising the Bar for Cantilevers

Chelsea Wald
Phys. Rev. Focus 14, 4 (2004)

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Issue

Vol. 93, Iss. 3 — 16 July 2004

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