Demonstration of a 1/4-Cycle Phase Shift in the Radiation-Induced Oscillatory Magnetoresistance in GaAs/AlGaAs Devices

R. G. Mani, J. H. Smet, K. von Klitzing, V. Narayanamurti, W. B. Johnson, and V. Umansky
Phys. Rev. Lett. 92, 146801 – Published 8 April 2004

Abstract

We examine the phase and the period of the radiation-induced oscillatory magnetoresistance in GaAs/AlGaAs devices utilizing in situ magnetic field calibration by electron spin resonance of diphenyl-picryl-hydrazal. The results confirm a f-independent 1/4-cycle phase shift with respect to the hf=jωc condition for j1, and they also suggest a small (2%) reduction in the effective mass ratio, m*/m, with respect to the standard value for GaAs/AlGaAs devices.

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  • Received 25 September 2003

DOI:https://doi.org/10.1103/PhysRevLett.92.146801

©2004 American Physical Society

Authors & Affiliations

R. G. Mani1, J. H. Smet2, K. von Klitzing2, V. Narayanamurti1,3, W. B. Johnson4, and V. Umansky5

  • 1Gordon McKay Laboratory of Applied Science, Harvard University, 9 Oxford Street, Cambridge, Massachusetts 02138, USA
  • 2Max-Planck-Institut für Festkörperforschung, Heisenbergstrasse 1, 70569 Stuttgart, Germany
  • 3Harvard University, 217 Pierce Hall, 29 Oxford Street, Cambridge, Massachusetts 02138, USA
  • 4Laboratory for Physical Sciences, University of Maryland, College Park, Maryland 20740, USA
  • 5Braun Center for Submicron Research, Weizmann Institute, Rehovot 76100, Israel

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Issue

Vol. 92, Iss. 14 — 9 April 2004

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