Mn Interstitial Diffusion in (Ga,Mn)As

K. W. Edmonds, P. Bogusławski, K. Y. Wang, R. P. Campion, S. N. Novikov, N. R. S. Farley, B. L. Gallagher, C. T. Foxon, M. Sawicki, T. Dietl, M. Buongiorno Nardelli, and J. Bernholc
Phys. Rev. Lett. 92, 037201 – Published 20 January 2004

Abstract

We present a combined theoretical and experimental study of the ferromagnetic semiconductor (Ga,Mn)As which explains the remarkably large changes observed on low-temperature annealing. Careful control of the annealing conditions allows us to obtain samples with ferromagnetic transition temperatures up to 159 K. Ab initio calculations, in situ Auger spectroscopy, and resistivity measurements during annealing show that the observed changes are due to out diffusion of Mn interstitials towards the surface, governed by an energy barrier of 0.7–0.8 eV. Electric fields induced by Mn acceptors have a significant effect on the diffusion.

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  • Received 24 June 2003

DOI:https://doi.org/10.1103/PhysRevLett.92.037201

©2004 American Physical Society

Authors & Affiliations

K. W. Edmonds1, P. Bogusławski2,3,4, K. Y. Wang1, R. P. Campion1, S. N. Novikov1, N. R. S. Farley1, B. L. Gallagher1, C. T. Foxon1, M. Sawicki2,3, T. Dietl2,3, M. Buongiorno Nardelli4, and J. Bernholc4

  • 1School of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD, United Kingdom
  • 2Institute of Physics, Polish Academy of Sciences, 02668 Warszawa, Poland
  • 3ERATO Semiconductor Spintronics Project, Japan Science and Technology Corporation, 02668 Warszawa, Poland
  • 4Department of Physics, North Carolina State University, Raleigh, North Carolina 27695, USA

Comments & Replies

Edmonds et al. Reply:

K. W. Edmonds, P. Bogusławski, K. Y. Wang, R. P. Campion, S. V. Novikov, N. R. S. Farley, B. L. Gallagher, C. T. Foxon, M. Sawicki, T. Dietl, M. Buongiorno Nardelli, and J. Bernholc
Phys. Rev. Lett. 94, 139702 (2005)

Comment on “Mn Interstitial Diffusion in (Ga,Mn)As”

M. Adell, J. Kanski, L. Ilver, J. Sadowski, V. Stanciu, and P. Svedlindh
Phys. Rev. Lett. 94, 139701 (2005)

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Vol. 92, Iss. 3 — 23 January 2004

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