Atomically Precise Placement of Single Dopants in Si

S. R. Schofield, N. J. Curson, M. Y. Simmons, F. J. Rueß, T. Hallam, L. Oberbeck, and R. G. Clark
Phys. Rev. Lett. 91, 136104 – Published 25 September 2003

Abstract

We demonstrate the controlled incorporation of P dopant atoms in Si(001), presenting a new path toward the creation of atomic-scale electronic devices. We present a detailed study of the interaction of PH3 with Si(001) and show that it is possible to thermally incorporate P atoms into Si(001) below the H-desorption temperature. Control over the precise spatial location at which P atoms are incorporated was achieved using STM H lithography. We demonstrate the positioning of single P atoms in Si with 1nm accuracy and the creation of nanometer wide lines of incorporated P atoms.

  • Figure
  • Figure
  • Figure
  • Figure
  • Received 21 April 2003

DOI:https://doi.org/10.1103/PhysRevLett.91.136104

©2003 American Physical Society

Authors & Affiliations

S. R. Schofield*, N. J. Curson, M. Y. Simmons, F. J. Rueß, T. Hallam, L. Oberbeck, and R. G. Clark

  • Centre for Quantum Computer Technology, School of Physics, University of New South Wales, Sydney, NSW 2052, Australia

  • *Electronic address: steven@phys.unsw.edu.au

Article Text (Subscription Required)

Click to Expand

References (Subscription Required)

Click to Expand
Issue

Vol. 91, Iss. 13 — 26 September 2003

Reuse & Permissions
Access Options

Authorization Required


×
×

Images

×

Sign up to receive regular email alerts from Physical Review Letters

Log In

Cancel
×

Search


Article Lookup

Paste a citation or DOI

Enter a citation
×