Doping of Magic Nanoclusters in the Submonolayer In/Si(100) System

V.  G. Kotlyar, A.  V. Zotov, A.  A. Saranin, E.  N. Chukurov, T.  V. Kasyanova, M.  A. Cherevik, I.  V. Pisarenko, H. Okado, M. Katayama, K. Oura, and V.  G. Lifshits
Phys. Rev. Lett. 91, 026104 – Published 11 July 2003

Abstract

Si(100)4×3In reconstruction is essentially a superlattice of magic (identical-size) Si7In6 nanoclusters. Using scanning tunneling microscopy (STM) observations, we have found that under appropriate growth conditions up to 35% of these clusters can be modified; namely, two Si atoms in the cluster can be replaced by two In atoms, thus forming a Si5In8 cluster. This modification can be considered as a doping of the magic cluster, as it changes the electronic properties of the cluster from semiconducting towards metallic. The doped cluster is less rigid than the ordinary one and swings in the electrical field of the STM tip. The atomic structure and stability of the doped magic cluster have been examined using first-principles total-energy calculations.

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  • Received 12 March 2003

DOI:https://doi.org/10.1103/PhysRevLett.91.026104

©2003 American Physical Society

Authors & Affiliations

V.  G. Kotlyar1, A.  V. Zotov1,2,5, A.  A. Saranin1,3,5, E.  N. Chukurov1, T.  V. Kasyanova1,3, M.  A. Cherevik1, I.  V. Pisarenko1, H. Okado4, M. Katayama5, K. Oura5, and V.  G. Lifshits1,2,3

  • 1Institute of Automation and Control Processes, 690041 Vladivostok, Russia
  • 2Department of Electronics, Vladivostok State University of Economics and Service, 690600 Vladivostok, Russia
  • 3Faculty of Physics and Engineering, Far Eastern State University, 690000 Vladivostok, Russia
  • 4Research Center for Ultra-High Voltage Electron Microscopy, Osaka University, Ibaraki, Osaka 567-0047, Japan
  • 5Department of Electronic Engineering, Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan

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Issue

Vol. 91, Iss. 2 — 11 July 2003

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